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Legacy Systems, Incorporated
In 1989 Legacy Systems, Inc. began researching improvements and new techniques in semiconductor wet processing. By 1990, Legacy developed Teflon™ Gas Diffusers for dispersion of anhydrous gases into deionized water. The result was an increase in gas absorbtion efficiency. In 1991, Legacy introduced the first Point-of-Use Generator using the Gas Diffusers. This provided a less expensive alternative to bottle-poured or drum-fed chemicals. Legacy began to manufacture High Flow Ozone Generators in 1992. These generators replaced hydrogen peroxide in sulfuric photoresist strip applications. One to three sulfuric wafer process tanks were fed from a single ozone generator. In 1993, Legacy introduced In-Situ Chemical Generators which combined the high purity chemistries from the Point-of-Use Generators with a superior cost of ownership. Legacy received hardware patents and a patent for Coldstrip™, our chilled ozone process, in 1995. Coldstrip™ eliminates the use of sulfuric acid, hydrogen peroxide, and the subsequent rinse associated with Piranha solutions. In 1997, Coldstrip™ won recognition by the United States Environmental Protection Agency, receiving the Green Chemistry Challenge Award for hazardous waste reduction, which serves to create a safer workplace. In 1998, Legacy integrated feedback concentration control technology into our ozone and chemical generation equipment. This feature allowed the process engineer to tailor the chemical concentration to his needs. The equipment was then capable of monitoring and maintaining the desired concentration set point. In 1999 and 2000, Legacy introduced Coldstrip™ Generation IV and our patented solvent drying, DryZone™ Wafer Dryer.
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